Developed semiconductor devices that can be used in high-temperature environments exceeding 800°C. Assistant Professor Okumura
Si (silicon, silicon) semiconductors are used in all kinds of equipment and have become indispensable in our daily lives. However, since Si devices can only operate at temperatures below 300°C, there is a need for device operation in environments above 300°C, such as underground resource drilling, space exploration, and engine peripherals.
In this study, diodes and transistors were fabricated and evaluated using a unique AlN sample with excellent crystal quality, and diodes and transistors were successfully operated at 827°C and 727°C, respectively. It was also found that Ni (nickel) electrodes can be used stably at 827°C for AlN devices. This AIN device is also superior in practicality because it uses an AlN layer on a sapphire substrate, for which low-cost and large-area samples are available, and because it achieves heat resistance with a simple device structure.
The results of this research have made it possible to use semiconductor devices in severe environments exceeding 800°C. This technology is expected to contribute to underground development, steel, and the space and aviation industries, which have been restricted due to high temperature environments.
